Accession Number:

ADA623747

Title:

Polarity Control and Doping in Aluminum Gallium Nitride

Descriptive Note:

Doctoral thesis

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

2013-06-01

Pagination or Media Count:

147.0

Abstract:

AlGaN can be used for the fabrication of lateral polar structures LPS by a periodic inversion of the c-axis as achieved by a polarity control scheme during its growth by metal organic chemical vapor deposition MOCVD. These structures can be used for second harmonic generation in the ultraviolet spectral region, as well as for lateral pn-junctions. The two major challenges addressed in this work exist in the general implementation of the AlGaN technology and in the fabrication of AlGaN LPS, and both prevent the realization of AlGaN UV-emitters. These challenges are 1 the presence of a high concentrations of native defects and extrinsic impurities in AlGaN that can reduce the efficiency of optoelectronic devices, especially in the case of high doping with Mg or Si, and 2 as typically observed, a growth rate difference that exists during the simultaneous growth of III- and N-polar domains adjacent to each other in a LPS.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE