A Calibration Method for Group V Fluxes and Impact of V/III Flux Ratio on the Growth of InAs/InAsSb Type-II Superlattices by Molecular Beam Epitaxy
ILLINOIS UNIV AT URBANA-CHAMPAIGN
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A calibration method for group V fluxes is demonstrated for the growth of InAsxSB1-x alloys and strain-balanced InAsInAsxSB1-x superlattices on GaSB substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying VIII flux ratios are investigated using several characterization methods, including X-ray diffraction XRD, photoluminescence PL, and reflection high energy electron diffraction. Samples grown at 450 deg C with SbIn flux ratios from 1.0 to 2.0 and AsIn flux ratios from 1.2 to 2.5 ead to Sb mole fractions randing from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low temperature emission wavelengths ranging from 3.6 to 7.1 micro m.
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