Accession Number:

ADA622743

Title:

N-Face GaN Electronics for Heteroepitaxial and Bonded Structures

Descriptive Note:

Final rept. 1 Apr 2010-31 Mar 2015

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA

Personal Author(s):

Report Date:

2015-08-27

Pagination or Media Count:

64.0

Abstract:

Wafer-bonded current aperture vertical transistors, BAVETs can obtain high frequency switching and breakdown. Transistor functionality has been obtained for such devices, but challenges such as high saturation voltages, on-resistance and low channel breakdown have limited performance. These performance anomalies may arise from the trap behavior of the waferbonded interface WBI. When passivating traps at the WBI, anomalies in a BAVET were eliminated. Its saturation voltage and drain resistance were lowered and critical field to impact-ionization was made higher through the optimization of the Npolar InGaN interlayer thickness and the utilization of the p-type III-As gate heterobarrier.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE