N-Face GaN Electronics for Heteroepitaxial and Bonded Structures
Final rept. 1 Apr 2010-31 Mar 2015
CALIFORNIA UNIV SANTA BARBARA
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Wafer-bonded current aperture vertical transistors, BAVETs can obtain high frequency switching and breakdown. Transistor functionality has been obtained for such devices, but challenges such as high saturation voltages, on-resistance and low channel breakdown have limited performance. These performance anomalies may arise from the trap behavior of the waferbonded interface WBI. When passivating traps at the WBI, anomalies in a BAVET were eliminated. Its saturation voltage and drain resistance were lowered and critical field to impact-ionization was made higher through the optimization of the Npolar InGaN interlayer thickness and the utilization of the p-type III-As gate heterobarrier.
- Physical Chemistry
- Electrical and Electronic Equipment
- Solid State Physics