Accession Number:

ADA622722

Title:

Control of Interfacial Phenomena in Artificial Oxide Heterostructures

Descriptive Note:

Final rept. 1 Jun 2012-31 May 2015

Corporate Author:

YALE UNIV NEW HAVEN CT

Personal Author(s):

Report Date:

2015-09-01

Pagination or Media Count:

14.0

Abstract:

Research has focused on discovering new oxide materials systems with novel properties and demonstrating their potential for high performance electronic applications. We have successfully developed materials with novel interfacial phenomena for defense applications in oxides and their heterostructures. Moreover, we have extended our research to the interfaces of complex oxides and transition metal chalcogenides with novel emergent electronic phases. Our achievements include the discovery of a new conducting channel between two oxides, KTaO3 and LaTiO3, with the highest room temperature electron mobility reported so far for oxide interfaces. We have also explored how to control of the properties of complex oxides and their heterostructures using the field effect to control superconductivity, magnetism, and metal--insulator transitions. We also identify the existence of double TiO2 layers at the surface of SrTiO3 in the recently discovered monolayer high temperature superconductor FeSeSrTiO3. Theoretical studies show that the double TiO2 layers play a crucial role in determining the superconducting states of monolayer FeSeSrTiO3.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE