Accession Number:

ADA622706

Title:

High K Oxide Insulated Gate Group III Nitride-Based FETs

Descriptive Note:

Final technical rept. 5 Apr 2009-20 Mar 2014

Corporate Author:

KANSAS STATE UNIV MANHATTAN

Personal Author(s):

Report Date:

2014-03-21

Pagination or Media Count:

2.0

Abstract:

The impact of process conditions on the physical and electrical properties of high-k dielectric oxides on gallium nitride were explored. The efficacies of several cleaning procedures prior to oxide deposition by atomic layer deposition were examined. Overall, the best treatments were those that removed surface carbon with minimal surface roughening. Parameters examined included the oxide composition AI203, Ti02, and Ga203, the gallium nitride crystallographic orientation c- and m-plane, and its crystal polarity Ga- anc N-polar.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE