High K Oxide Insulated Gate Group III Nitride-Based FETs
Final technical rept. 5 Apr 2009-20 Mar 2014
KANSAS STATE UNIV MANHATTAN
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The impact of process conditions on the physical and electrical properties of high-k dielectric oxides on gallium nitride were explored. The efficacies of several cleaning procedures prior to oxide deposition by atomic layer deposition were examined. Overall, the best treatments were those that removed surface carbon with minimal surface roughening. Parameters examined included the oxide composition AI203, Ti02, and Ga203, the gallium nitride crystallographic orientation c- and m-plane, and its crystal polarity Ga- anc N-polar.
- Electrical and Electronic Equipment