The Influence of Growth Temperature on Sb Incorporation in InAsSb, and the Temperature-dependent Impact of Bi Surfactants
MICHIGAN UNIV ANN ARBOR DEPT OF MATERIALS SCIENCE AND ENGINEERING
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A series of two-layer InAsSb films were grown with molecular beam epitaxy MBE. We report the effect of substrate temperature on the compositio of InAsSb grown with and without a Bi surfactant and fid that the Sb incroporation is suppressed as the substrate temperatutre increases, and that it is also further suppressed by the presence of Bi at all temperatures. We examine the data with a kinetic model, which gives insights into the composition of mixed anion alloys using straightforward rate equations for each process that occurs during growth. It was shown that the reduction in Sb compositin is due to the preferential removal of Bi by As, and that removal rate obeys an Arrhenius dependence with an activation energy of 1.35 eV.
- Inorganic Chemistry
- Miscellaneous Materials