Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures
ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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A novel technique is used to determine the minority carrier lifetimes, interface recombination velocity, and radiative recombination constant from time-resolved photoluminescence measurements on a set of 3 molecular beam epitaxy MBE-grown gallium arsenide GaAsaluminum gallium arsenide AlGaAs double heterostructures DHs and published theory. This technique is used to determine that a distributed Bragg reflector between the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth parameters.
- Physical Chemistry
- Electrooptical and Optoelectronic Devices
- Solid State Physics