Accession Number:

ADA622212

Title:

Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Report Date:

2015-09-01

Pagination or Media Count:

16.0

Abstract:

A novel technique is used to determine the minority carrier lifetimes, interface recombination velocity, and radiative recombination constant from time-resolved photoluminescence measurements on a set of 3 molecular beam epitaxy MBE-grown gallium arsenide GaAsaluminum gallium arsenide AlGaAs double heterostructures DHs and published theory. This technique is used to determine that a distributed Bragg reflector between the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth parameters.

Subject Categories:

  • Physical Chemistry
  • Electrooptical and Optoelectronic Devices
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE