Hardware Modifications to the US Army Research Laboratory's Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication
Final rept. May-Aug 2014
ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE
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An introduction to various metalorganic chemical vapor deposition MOCVD reactor designs and precursor delivery methods for the growth of complex oxide thin films is presented with comments on the respective advantages and limitations of each variation. Hardware modifications were made to the US Army Research Laboratory s MOCVD system in attempts to improve film purity and quality. A loading chamber was installed with a wobblestick load arm to protect samples from impurities in the main MOCVD chamber prior to deposition. Camera and light sources to provide a live video feed of the main MOCVD chamber were also installed to assist with the transportation of samples from the load chamber to the sample heater. Strontium titanate thin films were grown on platinized silicon substrates and were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy to investigate the impact of the implemented hardware modifications on composition, film quality, and homogeneity.
- Industrial Chemistry and Chemical Processing
- Test Facilities, Equipment and Methods