Accession Number:

ADA621904

Title:

Slow Light Semiconductor Laser

Descriptive Note:

Final rept. 1 Jul 2010-31 Jul 2014

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

• Yariv, Amnon

Report Date:

2015-02-02

Pagination or Media Count:

37.0

Abstract:

A canonical semiconductor laser has photons both generated and stored in the same, optically lossy, III-V material. This leads to an excessive and large amount of noisy spontaneous emission commingling with the laser mode, thereby degrading its coherence. Here, we propose a new design paradigm for the semiconductor laser, where by the incorporation of a very high Q resonator as an integral part of the laser cavity, we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 155 micrometers.

Descriptors:

• *SEMICONDUCTOR LASERS
• *TWO PHOTON ABSORPTION
• CAVITY RESONATORS
• COHERENCE
• COUPLING(INTERACTION)
• CRYSTALLIZATION
• EMISSION
• GROUP III COMPOUNDS
• GROUP V COMPOUNDS
• LASER CAVITIES
• NONLINEAR ANALYSIS
• OPTICAL PROPERTIES
• SPECTRAL LINES
• WAVEGUIDES

Subject Categories:

• Inorganic Chemistry
• Lasers and Masers
• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE