High Energy Effects on Thermoelectric and Optical Properties of Si/Si+Sb Nanolayered Thin Films
ALABAMA A AND M UNIV NORMAL
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We have prepared thermoelectric devices from alternating layers of SiSiSb superlattice films using ion beam assisted deposition IBAD. In order to determine the stoichiometry of the elements and the thickness of the grown multi-layer film, Rutherford Backscattering Spectrometry RBS and RUMP simulation have been used. SEM and EDS have been used to analyze the surface and composition of the thin films. The 5 MeV Si ion bombardments have been performed using the AAMU Pelletron ion beam accelerator, to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and increase the cross plane electrical conductivity to increase the figure of merit. Some optical instrumentations have been used addition to RBS and SEM.
- Properties of Metals and Alloys
- Electricity and Magnetism
- Solid State Physics