Accession Number:

ADA621739

Title:

Superlattice Multinanolayered Thin Films of SiO2/SiO2 + Ge for Thermoelectric Device Applications

Descriptive Note:

Journal article

Corporate Author:

ALABAMA A AND M UNIV NORMAL

Personal Author(s):

• Budak, Satilmis
• Parker, Robert
• Smith, Cydale
• Muntele, Claudiu
• Heidary, Kaveh
• Johnson, Ralph B.
• Ila, Daryush

Report Date:

2013-04-05

Pagination or Media Count:

11.0

Abstract:

Thermoelectric generators convert heat to electricity. Effective thermoelectric materials and devices have a low thermal conductivity and a high electrical conductivity. The performance of thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT S2sigmaTK, where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature, and K is the thermal conductivity. We have prepared 100 alternating layers of SiO2SiO2 Ge superlattice thin films using ion beam assisted deposition for the thermoelectric generator device application. The 5 MeV Si ion bombardments were performed using the Center for Irradiation Materials Pelletron ion beam accelerator to form quantum dots andor quantum clusters in the multinanolayer superlattice thin films to decrease the cross-plane thermal conductivity and increase the cross-plane Seebeck coefficient and cross-plane electrical conductivity. The thermoelectric and transport properties have been characterized for SiO2SiO2 Ge superlattice thin films.

Descriptors:

• *SILICON ALLOYS
• *SUPERLATTICES
• *THERMOELECTRIC POWER GENERATION
• *THIN FILMS
• CLUSTERING
• COEFFICIENTS
• ELECTRICAL CONDUCTIVITY
• ION ACCELERATORS
• ION BEAMS
• ION BOMBARDMENT
• IRRADIATION
• NANOSTRUCTURES
• SEEBECK EFFECT
• THERMAL CONDUCTIVITY
• THERMOELECTRICITY
• TRANSPORT PROPERTIES

Subject Categories:

• Electric Power Production and Distribution
• Properties of Metals and Alloys
• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE