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Accession Number:
ADA621194
Title:
Coupling Graphene Sheets with Magnetic Nanoparticles for Energy Storage and Microelectronics
Descriptive Note:
Final rept. 14 May 2012-13 May 2015
Corporate Author:
WASHINGTON UNIV SEATTLE
Report Date:
2015-08-13
Pagination or Media Count:
34.0
Abstract:
Low voltage self-assembled monolayer field-effect transistors SAMFETs that operate under an applied bias of less than -3 V and a high hole-mobility of 10-2 cm2 V-1 s-1 are reported. A self-assembled monolayer SAM with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high- voltage AlOx300 nm SiO2 and low-voltage HfO2 dielectric platforms. High performance is achieved through the enhanced SAM packing density via a heated assembly process and through the improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methyl-thio head group combined with thermal annealing post gold sourcedrain electrode deposition to facilitate the interaction between SAM and electrode. Furthermore, this SAMFET platform will be utilized as a monolayer memory transistor that has a charge trapping layer comprised of an interlayered magnetic nanoparticles and graphene oxide.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE