Accession Number:

ADA621194

Title:

Coupling Graphene Sheets with Magnetic Nanoparticles for Energy Storage and Microelectronics

Descriptive Note:

Final rept. 14 May 2012-13 May 2015

Corporate Author:

WASHINGTON UNIV SEATTLE

Report Date:

2015-08-13

Pagination or Media Count:

34.0

Abstract:

Low voltage self-assembled monolayer field-effect transistors SAMFETs that operate under an applied bias of less than -3 V and a high hole-mobility of 10-2 cm2 V-1 s-1 are reported. A self-assembled monolayer SAM with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high- voltage AlOx300 nm SiO2 and low-voltage HfO2 dielectric platforms. High performance is achieved through the enhanced SAM packing density via a heated assembly process and through the improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methyl-thio head group combined with thermal annealing post gold sourcedrain electrode deposition to facilitate the interaction between SAM and electrode. Furthermore, this SAMFET platform will be utilized as a monolayer memory transistor that has a charge trapping layer comprised of an interlayered magnetic nanoparticles and graphene oxide.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Energy Storage
  • Miscellaneous Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE