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Accession Number:
ADA621122
Title:
Low-temperature Spin Spray Deposited Ferrite/piezoelectric Thin Film Magnetoelectric Heterostructures with Strong Magnetoelectric Coupling
Descriptive Note:
Journal article
Corporate Author:
FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
Report Date:
2014-01-08
Pagination or Media Count:
8.0
Abstract:
We report low-temperature spin spray deposited Fe3O4ZnO thin film microwave magneticpiezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4ZnO magnetoelectric ME heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature 600 C deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O4ZnO ME heterostructures have much lower deposition temperature less than 100 C at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE