Oxide Based Transistor for Flexible Displays
Final rept. 2 Aug 2010-1 Aug 2013
NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO
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The team of NC AT and RTI, International investigated In free GaSnZnO GSZO material system, as the active channel in thin film transistors TFTs for next generation display technologies. A detailed and comprehensive study was carried out to ascertain the processproperty relationships of radio frequency RF sputtered GSZO films as a function of number of deposition parameters, including deposition temperature, process pressure and annealing temperature, duration and ambient using variety of characterization techniques for chemical and microstructural properties, electrical and opto-electrical properties. The impact of process conditions on the device performance was also subject of detailed study.
- Electrical and Electronic Equipment