Accession Number:

ADA616757

Title:

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

Descriptive Note:

Final rept. Jul 2013-Sep 2013

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Personal Author(s):

Report Date:

2015-02-01

Pagination or Media Count:

24.0

Abstract:

A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors IGBTs during switching of multiple power pulses.

Subject Categories:

  • Electrical and Electronic Equipment
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE