Accession Number:

ADA616553

Title:

On the Radiation Effect in Nanostructures Related to Nanomagnetics and Spintronics

Descriptive Note:

Technical rept. 24 Jun 2011-28 Jun 2014

Corporate Author:

VIRGINIA UNIV CHARLOTTESVILLE

Personal Author(s):

• Lu, Jiwei

Report Date:

2015-03-01

Pagination or Media Count:

27.0

Abstract:

In the frame of this project, we not only have advanced the understanding on radiation effects on spin transport related properties in novel magnetic materials, but also evaluated the next generation STT-RAM technology for Rad Hard that is essential to DTRA s mission. The overall goal is to investigate effects of displacement and ionization damages on the magnetic and structural properties of magnetic thin films and nanostructures, and to understand what factors control the radiation hardness of high-performance magnetic thin films and multilayers in nanoscale spin-based devices. To achieve these goals, a holistic approach has been taken to characterize the properties and microstructure of the thin films and spintronic devices and perform the modeling and simulation to help understanding the underlying physics of experimental phenomena by an interdisciplinary team with expertise on Materials Science, Device Physics, and Radiation Physics. We have systematically investigated the displacement and ionization damages to the perpendicular magnetic tunnel junctions p-MTJ, and also studied the effect of irradiations on novel magnetic materials.

Descriptors:

• *MAGNETIC PROPERTIES
• *NANOSTRUCTURES
• *RADIATION EFFECTS
• *SPINTRONICS
• *THIN FILMS
• HARDNESS
• IONIZING RADIATION
• IRRADIATION
• JUNCTIONS
• LAYERS
• MICROSTRUCTURE
• MODELS
• SIMULATION
• STRUCTURAL PROPERTIES
• SYNTHESIS(CHEMISTRY)
• TUNNELING(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products
• Electricity and Magnetism
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE