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On the Radiation Effect in Nanostructures Related to Nanomagnetics and Spintronics
Technical rept. 24 Jun 2011-28 Jun 2014
VIRGINIA UNIV CHARLOTTESVILLE
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In the frame of this project, we not only have advanced the understanding on radiation effects on spin transport related properties in novel magnetic materials, but also evaluated the next generation STT-RAM technology for Rad Hard that is essential to DTRA s mission. The overall goal is to investigate effects of displacement and ionization damages on the magnetic and structural properties of magnetic thin films and nanostructures, and to understand what factors control the radiation hardness of high-performance magnetic thin films and multilayers in nanoscale spin-based devices. To achieve these goals, a holistic approach has been taken to characterize the properties and microstructure of the thin films and spintronic devices and perform the modeling and simulation to help understanding the underlying physics of experimental phenomena by an interdisciplinary team with expertise on Materials Science, Device Physics, and Radiation Physics. We have systematically investigated the displacement and ionization damages to the perpendicular magnetic tunnel junctions p-MTJ, and also studied the effect of irradiations on novel magnetic materials.
APPROVED FOR PUBLIC RELEASE