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Accession Number:
ADA616494
Title:
Characterization of HgCdTe and Related Materials and Substrates for Third Generation Infrared Detectors
Descriptive Note:
Doctoral thesis
Corporate Author:
ARIZONA STATE UNIV TEMPE
Report Date:
2012-12-01
Pagination or Media Count:
136.0
Abstract:
HgCdTe is currently the dominant material for infrared sensing and imaging, and is usually grown on lattice-matched bulk CdZnTe CZT substrates. There have been significant recent efforts to identify alternative substrates to CZT as well as alternative detector materials to HgCdTe. In this dissertation research, a wide range of transmission electron microscopy TEM imaging and analytical techniques was used in the characterization of epitaxial HgCdTe and related materials and substrates for third generation IR detectors. ZnTe layers grown on Si substrates are considered to be promising candidates for lattice-matched, large-area, and low-cost composite substrates for deposition of II-VI and III-V compound semiconductors with lattice constants near 6.1 . After optimizing MBE growth conditions including substrate pretreatment prior to film growth, as well as nucleation and growth temperatures, thick ZnTeSi films with high crystallinity, low defect density, and excellent surface morphology were achieved. Changes in the ZnTe flux ratio used during growth were also investigated. Small-probe microanalysis confirmed that a small amount of As was present at the ZnTeSi interface.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
