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Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures
Final rept. 14 Aug 2013-13 Feb 2015
COLUMBIA UNIV NEW YORK
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In this project, we designed and engineered hetero-interfaces of 2-dimensional 2D van der Waals vdW materials for the realization of novel quantum electronic states. We employed molecular beam epitaxy MBE combined with nanofabrication techniques to form functional nanostructures that can be utilized for new electronic device applications. We have demonstrated growth of topological insulator, Bi2Te3 on the surface of hBN single crystals by MBE method. We also use transmission electron microscopy TEM analysis for the structural of the atomically sharp interface between hBN and Bi2Te3. Finally, we have developed unprecedentedly clean graphene supercoductor junctions that allowed to study transport across the van der Waals interface between the conductor and superconductor. Our observation of gate tunable transitions between retro intraband and specular interband Andreev reflections opens a new route for future experiments that could employ the gate control of the Cooper pair injection process.
APPROVED FOR PUBLIC RELEASE