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Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide
Final rept. 1 Sep 2010-31 Aug 2014
VANDERBILT UNIV NASHVILLE TN
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In this report, we describe our accomplishments during this project in four areas 1 optical switching of Si-VO2 ring resonators and Mach-Zehnder interferometers 2 nanosecond all-optical switching of Si-VO2 absorption modulators and ring resonators 3 nanosecond electrical switching of Si-VO2 absorption modulators and 4 designs for fiber-to-chip couplers and alternative modulator geometries. The operation of the Si-VO2 modulator is initially demonstrated by using photothermal heating to induce the VO2 semiconductor-to-metal phase transition and modulate the transmitted optical signal intensity. Ultrafast, all-optical switching at the nanosecond time scale is then demonstrated by using a pulsed nanosecond laser for excitation. Ultrafast electro-optic switching is also demonstrated at the nanosecond time scale using a geometry that would allow for straightforward integration with existing optical interconnect technologies. Finally, extensions to the Si-VO2 modulator are presented for increased efficiency of source-to-modulator coupling using a transformation optics design approach and increased quality factor-to-mode volume ratio using a slotted nanocavity design.
APPROVED FOR PUBLIC RELEASE