Accession Number:

ADA616152

Title:

Integrated Graphene-Based Optoelectronic Devices Used for Ultrafast Optical-THz Photodetectors, Modulators and Emitters

Descriptive Note:

Final rept. 7 Nov 2011-12 Feb 2012

Corporate Author:

CITY UNIV OF NEW YORK RESEARCH FOUNDATION

Personal Author(s):

• Gumbs, Godfrey

Report Date:

2015-04-03

Pagination or Media Count:

14.0

Abstract:

We carried out numerical simulations on multilayer plasmon excitations by resonant energy transfer. A formal derivation of the transfer rate from the plasmons to the Wannier excitons was performed. We stimulated fluorescence and compared our results with the conventional organicinorganic hybrid organic light-emitting diode OLEDs. We formulated electron energy loss spectroscopy EELS for multilayer epitaxial grapheme. Our derivation of the general angles-resolved EELS spectra for transmission and reflection is based on the prescribed electron trajectory. In particular, we were interested in application of the theory to various multi-layer electron gas MLEG configurations, i.e., epitaxial vs. exfoliated graphene. We did a comparison with the available experimental data to see the effect of the gap between the valence and conduction bands.

Descriptors:

• *GRAPHENE
• *MODULATORS
• *OPTOELECTRONICS
• *PHOTODETECTORS
• CHARGE CARRIERS
• CONDUCTION BANDS
• COUPLING(INTERACTION)
• DOPING
• ELECTROMAGNETIC FIELDS
• ELECTRON GAS
• ELECTRON SPECTROSCOPY
• ENERGY TRANSFER
• EPITAXIAL GROWTH
• EXPERIMENTAL DATA
• MAXWELLS EQUATIONS
• NANOMATERIALS
• NONLINEAR OPTICS
• PLASMONS
• QUANTUM DOTS
• SEMICONDUCTOR DIODES
• TUNNELING(ELECTRONICS)

Subject Categories:

• Physical Chemistry
• Electrooptical and Optoelectronic Devices
• Optical Detection and Detectors
• Optics
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE