Accession Number:

ADA616129

Title:

Gate-dependent Pseudospin Mixing in Graphene/boron Nitride Moire Superlattices

Descriptive Note:

Journal article

Corporate Author:

CALIFORNIA UNIV BERKELEY DEPT OF PHYSICS

Personal Author(s):

• Shi, Zhiwen
• Jin, Chenhao
• Yang, Wei
• Ju, Long
• Horng, Jason
• Lu, Xiaobo
• Bechtel, Hans A.
• Martin, Michael C.
• Fu, Deyi
• Wu, Junqiao

Report Date:

2014-08-31

Pagination or Media Count:

6.0

Abstract:

Electrons in graphene are described by relativistic Dirac Weyl spinors with a two-component pseudospin. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone, nomalous quantum Hall effect, and Klein tunnelling, in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sublattices at the atomic level. Grapheneboron nitride moir superlattices, where a fast sublattice oscillation due to boron and nitrogen atoms is superimposed on the slow moire period, provides an attractive approach to engineer the electron pseudospin in graphene.

Descriptors:

• *BORON NITRIDES
• *GRAPHENE
• *MOIRE EFFECTS
• *SPINTRONICS
• *SUPERLATTICES
• ABSORPTION
• CHARGE CARRIERS
• DIELECTRICS
• ELECTRON ELECTRON INTERACTIONS
• EXPERIMENTAL DATA
• FERMIONS
• GATES(CIRCUITS)
• HALL EFFECT
• HYBRIDIZATION
• INFRARED SPECTROSCOPY
• PHOTOCONDUCTIVITY
• TUNNELING(ELECTRONICS)

Subject Categories:

• Physical Chemistry
• Crystallography
• Electricity and Magnetism
• Atomic and Molecular Physics and Spectroscopy
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE