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10kW TWT Transition to GaN IRE
Research rept. Dec 2014-Mar 2015
NAVAL SURFACE WARFARE CENTER CRANE DIV IN
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The purpose of this Internal Rapid Experimentation IRE is to develop a Gallium Nitride GaN replacement for 10kW Traveling Wave Tube TWT. A phased approach will be used to develop a solid state replacement for the TWT. Phase I covered by this IRE, was to do market research on commercially available GaN transistors as a substitute for traveling wave tubes in high power radar and Electronic Warfare EW applications. GaN transistors, using evaluation boards, were tested and analyzed, supplementing and compared against the data found on the vendor s data sheet. Using vendor models of selected transistors, an initial design approach and architecture was developed using Keysight ADS software. Simulations were run for comparison against vendor data sheets and the test data collected.
APPROVED FOR PUBLIC RELEASE