High-temperature Superconductivity in Diamond Films - from Fundamentals to Device Applications
Final rept. 25 Mar 2013-24 Sep 2014
MELBOURNE UNIV PARKVILLE (AUSTRALIA)
Pagination or Media Count:
The specific aims of the research as proposed in the original grant application are i to test the hypotheses that repeated implants of boron in diamond below the graphitization limit followed by high-temperature annealing can increase the carrier density in the buried layer to levels required for the occurrence of superconductivity ii the demonstration of superconductivity in a repeatedly boron-implanted and annealed diamond crystal in our dilution refrigerator, after which iii we will implement a superconducting quantum interference device SQUID. The ultimate goal of the work is to develop the technology and expertise to create robust, superconducting devices in diamond that can operate in high-magnetic fields and relatively high temperatures Tc 11 K according to the theory of M.L. Cohen for a fractional boron concentration of 30, c.f. Fig. 1. Further benefits of this research may be found in the high-frequency operation of such devices in environmentally harsh environments such as space. The work presented here is essentially a feasibility study for the existence of high-Tc diamond superconductors based on B-implantation followed by new techniques for the annealing of damage.
- Physical Chemistry
- Coatings, Colorants and Finishes
- Electricity and Magnetism