Tunable High Brightness Semiconductor Sources
Final rept. 5 Nov 2010-1 Feb 2015
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIR
Pagination or Media Count:
This final report documents research included within the Tunable High Brightness Semiconductor Sources work unit includes several technology advancements. First, theoretical advances in mid-IR type-I quantum well laser efficiency improvement are presented utilizing deep understanding of Auger recombination effects and how to change them through proper laser design. Experimental results are presented to confirm this effect at a wavelength of approximately 2 microns. Future directions are presented, including metamorphic buffer layer grown material, interfacial misfit layers, etc. Second, a surface-emitting distributed feedback type-II quantum well laser is introduced and experimental advances are presented. Thirdly, progress in graphene-based saturable absorbers and reverse saturable absorbers are presented. Finally, advances in solder technology for optoelectronics including, but not limited to mid-IR lasers is presented with novel high surface quality indium, and intracavity difference frequency generation.
- Electrical and Electronic Equipment
- Quantum Theory and Relativity