Accession Number:

ADA615865

Title:

Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures

Descriptive Note:

Final rept. 1 May-30 Nov 2014

Corporate Author:

ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE

Report Date:

2015-04-01

Pagination or Media Count:

24.0

Abstract:

Investigations were conducted in the optimization of a lift-off photolithography technique using thick negative photoresist PR NR9-8000 to achieve and optimize micron-scale interdigitated capacitor IDC structures by lift-off process for use in high-frequency electrical characterization measurements. Target feature resolution was in the range of 3 20 m, with PR thickness in the range of 6 20 m. Systematic deviations were made from manufacturer-recommended PR processing conditions to investigate a processing-structure relationship for optimizing of IDC fabrication including PR response to manipulation of substrate material, spin-speed, postexposure bake, exposure dose, and development process conditions. Postexposure bake temperature was found to be the most sensitive and critical parameter for the optimization of PR structures.

Subject Categories:

  • Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE