Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures
Final rept. 1 May-30 Nov 2014
ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE
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Investigations were conducted in the optimization of a lift-off photolithography technique using thick negative photoresist PR NR9-8000 to achieve and optimize micron-scale interdigitated capacitor IDC structures by lift-off process for use in high-frequency electrical characterization measurements. Target feature resolution was in the range of 3 20 m, with PR thickness in the range of 6 20 m. Systematic deviations were made from manufacturer-recommended PR processing conditions to investigate a processing-structure relationship for optimizing of IDC fabrication including PR response to manipulation of substrate material, spin-speed, postexposure bake, exposure dose, and development process conditions. Postexposure bake temperature was found to be the most sensitive and critical parameter for the optimization of PR structures.
- Printing and Graphic Arts