Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate
Final rept. 31 January 2013 to 30 January 2014
NATIONAL TAIWAN UNIV TAIPEI
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The objective of this research was to develop 1 direct-bandgap Sn-based group-IV material with very low defect densities and 2 a new type of Sn-based group-IV light-emitting diode LED structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si 001 wafers using molecular beam epitaxy MBE with low-temperature growth techniques resulted in thick GeSn films with a defect densities of 105cm2, which are believed to be the lowest reported in the literature. A new type of planar strip LED was fabricated that exhibits better performance than conventional vertical LEDs, can be integrated with most planar electronic devices, and can also function as an optical cavity.
- Electrooptical and Optoelectronic Devices