Accession Number:

ADA615722

Title:

Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

Descriptive Note:

Final rept. 1 Apr 2011-30 Jun 2014

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK RESEARCH FOUNDATION

Report Date:

2014-09-25

Pagination or Media Count:

14.0

Abstract:

Novel designs of the mid-infrared GaSb-based diode lasers were studied including those based on triple layer quantum well active regions, metamorphic virtual substrate and cascade pumping scheme. Cascade pumping of type-I quantum well gain section opened the whole new avenue of the mid-infrared diode laser development with the prospect of multifold improvement of the device characteristics. Cascade pumping was achieved utilizing efficient interband tunneling through leaky window in band alignment at GaSbInAs heterointerface. The 100 efficient carrier recycling between stages was confirmed by twofold increase light-current characteristics slope of two-stage 2.4-3.3 m cascade lasers as compared to reference single-stage devices. The cascade pumping scheme reduced threshold current density of high power type-I quantum well GaSb-based 3 micron diode lasers down to 100 Asq cm at room temperature. Devices with densely stacked two and three gain stages and 100-micron-wide aperture demonstrated peak power conversion efficiency of 16 and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. Devices

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE