Diffraction Limited 3.15 Microns Cascade Diode Lasers
STATE UNIV OF NEW YORK AT STONY BROOK RESEARCH FOUNDATION
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In this work we report on design and development of the single spatial mode cascade diode lasers operating near 3.15 microns. The narrow ridge lasers generated more than 40 mW of continuous wave CW power at room temperature RT in diffraction limited beam. Each gains stage consists of three nominally 1.3-compressively-strained Ga45In55As30Sb70 quantum wells QWs, spaced by 50 nm of quinary AlGaInAsSb barriers, and sandwiched between two 200-250-nm-wide barrier layers of the same composition. The tunnel junctioncarrier injector heterostructure was based on 100-microns-thick AlGaAsSb graded layer, 10-nm-thick GaSb layer and moderately doped 25-nm-wide chirped AlSbInAs superlattice.
- Lasers and Masers