Ionizing and Non-ionizing Radiation Effects in Thin Layer Hexagonal Boron Nitride
AIR FORCE INSTITUTE OF TECHNOLOGY WRIGHT-PATTERSON AFB OH GRADUATE SCHOOL OF ENGINEERING AND MANAGEMENT
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The radiation response of 14nm h-BNSi metal insulator semiconductor MIS devices was investigated using current-voltage and capacitance-voltage measurements indicating Frenkel Poole FP and Fowler-Nordheim tunneling FNT are the primary current mechanisms before and after irradiation. The data were fit to a composite model of FP and FNT currents. Irradiations to 33.1, 99.3, and 331 kradSi from a cobalt-60 source causes a negative voltage shift to the current-voltage measurements of -0.14, -0.45, and -0.46 V respectively. The negative shift indicates radiation induced production of positive space charge at the h-BNSi interface. No device characteristic changes were observed following gamma irradiation. Fitting the model to data collected after neutron irradiation at affluence of 3.76x1015 ncm2 indicated no change in the barrier potential for the linear FNT model and a 0.013 eV increase in the barrier potential for the FP model. There was a decrease of 0.19 eV in the tunneling potential for the non-linear FNT model. Defects generated by the neutron damage increased currents by increasing trap assisted tunneling TAT.