Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)
ARMY RESEARCH DEVELOPMENT AND ENGINEERING COMMAND REDSTONE ARSENAL AL
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The purpose of this report is to investigate the low temperature Photoluminescence PL from High Electron Mobility Transistor HEMT structures that have been modified by proton irradiation. The samples are aluminum gallium nitride AlGaNgallium nitride GaN and indium aluminum nitride InAlNGaN HEMT structures. These samples were cooled to 13 K and excited with Continuous Wave CW lasers at 325 and 244 nanometers to look for PL originating from a Two-Dimensional Electron Gas 2DEG.
- Electrical and Electronic Equipment