Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices
NAVAL RESEARCH LAB WASHINGTON DC
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Epitaxial GaN films were grown by metal organic chemical vapor deposition MOCVD on functionalized epitaxial graphene EG using a thin approxmately 11 nm conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cmexp -1 after GaN growth. X-ray diffraction analysis reveals 0001-oriented hexagonal GaN with 0002 peak rocking curve full width at the half maximum FWHM of 544 arcsec. The FWHM values are similar to reported values for GaN grown by MOCVD on sapphire. The GaN layer has a strong room-temperature photoluminescence band edge emission. Successful demonstration of GaN growth on EG opens up the possibility of III nitridegraphene heterostructure-based electronic devices and promises improved performance.
- Electrical and Electronic Equipment
- Atomic and Molecular Physics and Spectroscopy