Hetero-Interfaces For Extreme Electronic Environments
Final rept. 15 Apr 2011-14 Apr 2014
CASE WESTERN RESERVE UNIV CLEVELAND OH
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Formation of a two dimensional conducting interface between two perovskite insulators i.e., LaAlO3 on SrTiO3 was first reported in 2004. This unexpected result was related to internal polarization, defect structures and polarization discontinuity. In 2006 it was reported for the first time that the conductivity of the hetero-interface could be switched between two states by application of an external field analogous to gate voltage. The memory effect in these hetero-interfaces has the potential to open the pathway for revolutionary new technologies that depend on different physical effects than semiconductor based memories. In addition, magnetic scattering and superconductivity has been observed at very low temperatures 1K. Over the last decade a greater number of experimental observations or lack thereof resulted in modifications to the original hypotheses or development of new hypotheses. This report contains a summary of such new hypothesis and supporting or conflicting results we have observed in the path to understand the electrical behavior of such oxide based hetero-interfaces.
- Solid State Physics