Accession Number:

ADA609891

Title:

Fabrication of High-Voltage Bridge Rectifier Modules for Pulse Power Applications

Descriptive Note:

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

2014-09-01

Pagination or Media Count:

24.0

Abstract:

Fifteen-kV full-bridge rectifier modules are a custom component developed and fabricated by the US Army Research Laboratory ARL in order to demonstrate 15 kV, 3-A, and 6-A silicon carbide SiC junction barrier Schottky rectifier modules in application circuits. Such high voltage, high-speed rectifiers help reduce power conversion volume while increasing efficiency. This development also serves to identify challenges associated with high voltage semiconductor packaging. The SiC junction-barrier Schottky JBS diodes used in the module were state-of-the-art devices developed and fabricated by CREE Inc. under the Defense Advanced Research Projects Agency s Wide Bandgap Semiconductor Technology Initiative. The 3-A rated die are 8 mm 8 mm in total area, and the 6-A rated die are 10 mm 10 mm.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE