Accession Number:

ADA609528

Title:

Wide-Pulse Evaluation of 0.5 CM2 Silicon Carbide SGTO

Descriptive Note:

Conference paper

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

2009-06-01

Pagination or Media Count:

5.0

Abstract:

Silicon carbide Super-GTOs are being pursued by the Army as a replacement for current silicon-based, high-power pulse switches. In this study, 0.5 cm2 silicon carbide SGTOs were evaluated in an RLC pulse circuit which provided a half-sine shaped pulse at a width of 1 ms. The parameters assessed were peak current capability, 1000-shot reliability, and current sharing between parallel switches. SGTOs were pulsed as high as 1600 A, but 1250 A was found to be the most reliable and repeatable current level for most devices. This current waveform corresponds to an action of 850 A2s and a current density over the emitter area of 3.5 kAcm2. SGTOs were pulsed for over 1000 single shots without any significant change in forward voltage drop. A pair of parallel SGTOs was pulsed up to a total of 2600 A, and repeatedly at 2500 A, with current sharing within plus - minus 1. This paper details the evaluations of individual and paralleled devices which are being studied in preparation for future work with multichip modules.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE