Accession Number:

ADA609453

Title:

Evaluation of the Safe Operating Area of a 2.0 CM2, 4 kV SI SGTO

Descriptive Note:

Conference paper

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

2007-06-01

Pagination or Media Count:

8.0

Abstract:

The U. S. Army Research Laboratory ARL has been evaluating high voltage, high current modular silicon Super-gate turn-off thyristors SGTOs developed by Silicon Power Corporation SPCO for ARL. SGTOs were characterized at the individual chip level in order to help understand the capabilities of any scaled up device packages. SGTOs were individually pulsed in two separate test beds one designed to produce narrow current pulses, and another designed for wider pulses reaching 1 ms. Peak current, rise time and action I2t limitations were evaluated across this spectrum of pulse widths to document the Safe Operating Area SOA of the Si SGTOs. The peak current attained at a 1.9 mus FWHM pulse width was 20 kA with a 10-90 rate-of-current rise of 26 kA s. In the wider pulse circuit, single die were switched as high as 6.2 kA with an action value of 18 x 103 A2s. Waveforms for various SGTOs were analyzed, and a set of SOA curves was created to represent characterization of the SGTO die. An exploration to minimize recovery time Tq is also included, with Tq time reduced to 10 mus following a 1- ms wide, 5 kA pulse.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE