Accession Number:

ADA608958

Title:

Continuous Ultra-Thin MOS2 Films Grown by Low-Temperature Physical Vapor Deposition (Postprint)

Descriptive Note:

Interim rept. 1 Jul 2010-15 Jun 2014

Corporate Author:

AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH FUNCTIONAL MATERIALS DIV

Report Date:

2014-07-01

Pagination or Media Count:

9.0

Abstract:

Uniform growth of pristine two dimensional 2D materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 deg C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE