Accession Number:

ADA608490

Title:

Photo-Sensitivity of Large Area Physical Vapor Deposited Mono and Bilayer MoS2 (Postprint)

Descriptive Note:

Interim rept. 1 Jul 2010-13 Jun 2014

Corporate Author:

AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH FUNCTIONAL MATERIALS DIV

Report Date:

2014-07-01

Pagination or Media Count:

9.0

Abstract:

We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS2 photo device with performance comparable to their exfoliated counterparts.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE