Accession Number:

ADA608439

Title:

Investigation of Impurities in type-II InAs/GaSb Superlattices via Capacitance-Voltage Measurement

Descriptive Note:

Journal article

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL OFFICE OF RESEARCH SPONSORED PROJECTS

Report Date:

2013-07-17

Pagination or Media Count:

7.0

Abstract:

Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAsGaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6meV and a total concentration of low 1015 cm 3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.

Subject Categories:

  • Crystallography
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE