Accession Number:

ADA608396

Title:

Characterization of One-Dimensional Quantum Channels in InAs/AlSb

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2002-09-06

Pagination or Media Count:

9.0

Abstract:

We report on the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a nanofabrication scheme that utilizes a 3-nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4 K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.

Subject Categories:

  • Theoretical Mathematics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE