Accession Number:
ADA608396
Title:
Characterization of One-Dimensional Quantum Channels in InAs/AlSb
Descriptive Note:
Journal article
Corporate Author:
NAVAL RESEARCH LAB WASHINGTON DC
Personal Author(s):
Report Date:
2002-09-06
Pagination or Media Count:
9.0
Abstract:
We report on the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a nanofabrication scheme that utilizes a 3-nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4 K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.
Descriptors:
Subject Categories:
- Theoretical Mathematics
- Quantum Theory and Relativity