Lifetime-limiting Defects in n(-) 4H-SiC Epilayers
NAVAL RESEARCH LAB WASHINGTON DC
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Low-injection minority carrier lifetimes MCLs and deep trap spectra have been investigated in n 4H-SiC epilayers of varying layer thicknesses, in order to enable the separation of bulk lifetimes from surface recombination effects. From the linear dependence of the inverse bulk MCL on the concentration of Z1Z2 defects and from the behavior of the deep trap spectra in 4H-SiC p-i-n diodes under forward bias, we conclude that it is Z1Z2 alone that controls the MCL in this material.
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