Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)
NORTHWESTERN UNIV EVANSTON IL DEPT OF MATERIALS SCIENCE AND ENGINEERING
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Atomic-layer 2D crystals have unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC0001, the interface strongly influences the electronic properties of the overlaying graphene. We demonstrate a novel combination of x-ray scattering and spectroscopy for studying the complexities of such a buried interface structure. This approach employs x-ray standing wave-excited photoelectron spectroscopy in conjunction with x-ray reflectivity to produce a highly resolved chemically sensitive atomic profile for the terminal substrate bilayers, interface, and graphene layers along the SiC0001 direction.
- Industrial Chemistry and Chemical Processing
- Inorganic Chemistry
- Physical Chemistry