Accession Number:

ADA605561

Title:

20 kV, 2 cm2, 4H-SIC Gate Turn-Off Thyristors for Advanced Pulsed Power Applications

Descriptive Note:

Conference paper

Corporate Author:

CREE RESEARCH INC DURHAM NC

Report Date:

2013-06-01

Pagination or Media Count:

5.0

Abstract:

The need for high voltage solid-state power electronic devices for advanced power distribution and energy conversion has grown rapidly in recent years, especially for pulsed power applications that require high turn-on didt. However, current power converters built with silicon Si switches are quite bulky and inefficient, making their utilization difficult in practical energy conversion and power distribution systems. The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide SiC has attracted great attention due to its superior material properties over silicon. Among the high-voltage SiC power devices, SiC gate turn-off thyristor GTO offers excellent current handling, very high voltage blocking, and fast turn-off capabilities. SiC GTO also exhibits lower forward voltage drop than the IGBT-based switch at high injection-level currents, resulting in lower power losses during normal operation. In this paper, we report our recently developed 2 cm2, 20 kV SiC p-type gate turnoff GTO thyristor with very low differential on-resistance for advanced pulsed power applications.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE