Accession Number:

ADA604893

Title:

A Ferroelectric Oxide Made Directly on Silicon

Descriptive Note:

Journal article

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

2009-04-17

Pagination or Media Count:

24.0

Abstract:

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate SrTiO3 films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

Subject Categories:

  • Inorganic Chemistry
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE