Accession Number:

ADA604045

Title:

Influence of Surface Steps on Molecular Beam Epitaxy of Topological Insulators

Descriptive Note:

Final rept. 1 Aug 2012-30 Apr 2013

Corporate Author:

TEXAS UNIV AT AUSTIN

Personal Author(s):

• Shih, Chih-Kang

Report Date:

2014-05-10

Pagination or Media Count:

10.0

Abstract:

This proposal is aimed at investigating the influence of substrate steps on molecular beam epitaxial growth of Bi2Se3 and Bi2Te3 topological insulators on Si 111. It uses a novel combinatorial approach by creating micro-lens structures on Si111 substrate. The microlens contains a combination of numerous micro-surfaces with different miscut angles and miscut orientation. By using scanning probe microscopy, we can investigate how different miscut angles and orientations influence the growth process.

Descriptors:

• *MOLECULAR BEAM EPITAXY
• ELECTRONICS
• EPITAXIAL GROWTH
• FABRICATION
• SEMICONDUCTORS
• SILICON ON INSULATOR
• SUBSTRATES

Subject Categories:

• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE