Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids
Final rept. 30 Nov 2012-28 Feb 2014
NEW MEXICO UNIV ALBUQUERQUE CENTER FOR HIGH TECHNOLOGY MATERIALS
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The objective of this project was to create a novel template of nanovoids that could then be used for integration of a variety of colloidal quantum dots CQDs with a III-V matrix. More specifically, the project dealt with the issues related to the creation of in situ nanovoids, the development of sites in these nanovoids for attachment of the CQDs, and finally the ability to encapsulate the CQDs in the III-V matrix. An innovative and novel approach for the fabrication of the nanovoids was demonstrated, using a molecular-beam-epitaxy MBE-based in situ etching process that enabled the creation of the nanovoids on a GaSb epilayer using an As flux, thus eliminating the need for post-growth wet or dry etching processes. The As-based etching resulted in crystallographically faceted nanovoids, which are unique to this process. It should be noted that due to surface tension, wet-etching techniques cannot form nanovoids on this scale, while dry etching techniques cannot create faceted voids critical for anchoring CQDs. This project represents a completely novel approach towards the integration of non-epitaxially grown CQDs with MBE-based epitaxial structures, and its successful completion enables the realization of an entirely new class of heterogeneous devices.
- Inorganic Chemistry
- Quantum Theory and Relativity