Antimonide-Based Compound Semiconductors for Low-Power Electronics
NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
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Quantum wells formed from antimonide-based compound semiconductors are exploited in n-channel field-effect transistors FETs operating at high speeds with ultra-low power consumption. Compressive strain enhances hole mobilities making these materials strong candidates for p-channel FETs and complementary circuits. Recent work focuses on incorporation of gate oxides and integration of n- and p-channel FETs.
- Electrical and Electronic Equipment
- Solid State Physics