Accession Number:

ADA595642

Title:

Antimonide-Based Compound Semiconductors for Low-Power Electronics

Descriptive Note:

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Personal Author(s):

Report Date:

2013-01-01

Pagination or Media Count:

3.0

Abstract:

Quantum wells formed from antimonide-based compound semiconductors are exploited in n-channel field-effect transistors FETs operating at high speeds with ultra-low power consumption. Compressive strain enhances hole mobilities making these materials strong candidates for p-channel FETs and complementary circuits. Recent work focuses on incorporation of gate oxides and integration of n- and p-channel FETs.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE