Accession Number:

ADA592874

Title:

Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Report Date:

2013-11-01

Pagination or Media Count:

4.0

Abstract:

In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing 300 deg C, low Schottky barrier height for holes 0.1 eV, low sheet resistance of Ni-InGaSb 53 ohmsquare , and low specific contact resistivity 7.6 x 10 expn -7 ohm cmexpn 2, show good progress toward antimonide-based metal sourcedrain SD p-channel metal oxide semiconductor field-effect transistors. Devices with a self-aligned metal SD were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ONOFF ratio 10expn 4, subthreshold swing 140 mVdecade, and high effective-field hole mobility of 510 cmexpn 2Vs at sheet charge density of 2 x 10expn 12 cmexpn -2.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Metallurgy and Metallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE