Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
NAVAL RESEARCH LAB WASHINGTON DC
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Heterostructure field-effect transistors HFETs composed of antimonide-based compound semiconductor ABCS materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors HEMTs exhibit a transconductance of 1.3 Smm at VDS 0.2V and an fT Lg product of 33 GHz-microns for a 0.2 microns gate length. The design, fabrication and improved performance of InAlSbInGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2V-sec, an fmax of 34 GHz for a 0.2 m gate length, a threshold voltage of 90mV, and a subthreshold slope of 106mVdec at VDS 1.0V.
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