Estimation of Residual Nitrogen Concentration in Semi-Insulating 4H-SiC via Low Temperature Photoluminescence
NAVAL RESEARCH LAB WASHINGTON DC
Pagination or Media Count:
The conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating SI 4H-SiC substrates where all N shallow donors are compensated in the dark.
- Inorganic Chemistry