Accession Number:

ADA592429

Title:

Estimation of Residual Nitrogen Concentration in Semi-Insulating 4H-SiC via Low Temperature Photoluminescence

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2005-01-28

Pagination or Media Count:

4.0

Abstract:

The conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating SI 4H-SiC substrates where all N shallow donors are compensated in the dark.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE