Accession Number:

ADA592425

Title:

InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2008-08-01

Pagination or Media Count:

5.0

Abstract:

InAs-based heterostructure barrier varactor HBV diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current-voltage and capacitance-voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum- to-minimum capacitance ratios greater than those predicted by traditional HBV models were measured. The HBVs unconventional behavior in terms of charge accumulation layers adjacent to the wide bandgap barrier is discussed.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE